A collection of resaerch papers from the past till date, along with other published material- manuals, brochures, extensive logs that give details pertaining to Renewable energy from eras gone by. The publications are a good way to study the progress and learn about various aspects involved in this field.
S. Ajayi AN ASSESSMENT OF ALTERNATIVE ENERGY TECHNOLOGIES FOR POWER PRODUCTION IN NIGERIA Journal Article Nigerian Journal of Renewable Energy, (Vol. 4, No. 2, 1996) , 0000, ISBN: 2344SERC. @article{Sajayi1996, title = {AN ASSESSMENT OF ALTERNATIVE ENERGY TECHNOLOGIES FOR POWER PRODUCTION IN NIGERIA}, author = {S. Ajayi}, url = {https://serc.org.ng/wp-content/uploads/2017/07/BASIC-PC-MAINTENANCE.pdf, Download}, isbn = {2344SERC}, journal = {Nigerian Journal of Renewable Energy}, volume = {(Vol. 4, No. 2, 1996)}, abstract = {Abstract-The oil producing developing nations of the world were not seriously affected by the devastating impart of the energy crises of the 1973-74 and 1979 whereas the oil-importing developing nations were severely affected. The shocks of the crises have direct impact of increasing cost of imported oil. indirect impacts of global inflation, economic recession, high interest rates and the collapse of many commodity prices. Increased earn..ings from exported oil in developing nations created a comfortable envirorunent for electric power generation during the last decade. Consequently the energy industry faces numerous challenges resulting from increased internal growth in which the integ1·ation of e volutionary renewable energy technologies (such as hydropower, biomass, wind power, photovoltaics and geothermal power) appear to play a major role . Other challenges include political and financial pressures. This paper reviews t hP. prospcr.ls and chaUcnges of integ1·ating the mature and emc1·ging renewable fuel technologies for power produr.tion in 01igeria and therefore calls for an improved ene1·gy conservation and d evelopment policy. This should be suppm:ted by effective implementation, eventually resulting in visible industrialisation, P.ven of the rural communities.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract-The oil producing developing nations of the world were not seriously affected by the devastating impart of the energy crises of the 1973-74 and 1979 whereas the oil-importing developing nations were severely affected. The shocks of the crises have direct impact of increasing cost of imported oil. indirect impacts of global inflation, economic recession, high interest rates and the collapse of many commodity prices. Increased earn..ings from exported oil in developing nations created a comfortable envirorunent for electric power generation during the last decade. Consequently the energy industry faces numerous challenges resulting from increased internal growth in which the integ1·ation of e volutionary renewable energy technologies (such as hydropower, biomass, wind power, photovoltaics and geothermal power) appear to play a major role . Other challenges include political and financial pressures. This paper reviews t hP. prospcr.ls and chaUcnges of integ1·ating the mature and emc1·ging renewable fuel technologies for power produr.tion in 01igeria and therefore calls for an improved ene1·gy conservation and d evelopment policy. This should be suppm:ted by effective implementation, eventually resulting in visible industrialisation, P.ven of the rural communities. |
J. A. AKINTUNDE THERMAL STABILITY OF ELECTRICAL PROPERTIES OF ION IMPLANTED GaAs Journal Article Nigerian Journal of Renewable Energy, (Vol. 4, No. 2, 1996) , 0000, ISBN: 13333. @article{Sajayi1996b, title = {THERMAL STABILITY OF ELECTRICAL PROPERTIES OF ION IMPLANTED GaAs}, author = {J. A. AKINTUNDE}, url = {https://serc.org.ng/wp-content/uploads/2017/07/BASIC-PC-MAINTENANCE.pdf, Download}, isbn = {13333}, journal = {Nigerian Journal of Renewable Energy}, volume = {(Vol. 4, No. 2, 1996)}, abstract = {Abstract- A review is presented of the results of work done on the thermal stability of electrical properties of ion implanted, transiently annealed .GaAs. The sheet carrier concentrations in GaAs samples, rapidly thermal annealed for times of 1-100 seconds, and pulsed laser or electron beam annealed, remain constant after subsequent heat treatments below 600°C arid 200°C respectively. The latter temperature limit of 200°C can be extended to 300°C if the GaAs sample is implanted hot (e.g. 150°C), an inctication that reduced implantation damage improves thermal stability of implanted dopants. At and above these temperatures, the observed changes in the carder concentrations in tellurium and selenium implanted GaAs are reversible following pulsed laser ann~ng. The changes in selenium and zinc, and beryllium (or magnesium) implanted GaAs are reversible and irreversible respectively, following rapid thermal annealing. probably due to out-diffusion of beryllium and magnesium during annealing. Activation energies obtained for reduction in carrier concentrations vary between ,...., 1 e V and 2 e V, which is suggested to correspond to t he diffusion of gallium vacancies/atoms. Holding GaAs samples above 350°C during transient annealing reduces the rate of decay of electrical cvnductivity induced by a subsequent heat t reatment. More specifi<: information is-needed on the nature of defects, mechanisms of defects formation, and their relationship with thermal stability of implanted dopants.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Abstract- A review is presented of the results of work done on the thermal stability of electrical properties of ion implanted, transiently annealed .GaAs. The sheet carrier concentrations in GaAs samples, rapidly thermal annealed for times of 1-100 seconds, and pulsed laser or electron beam annealed, remain constant after subsequent heat treatments below 600°C arid 200°C respectively. The latter temperature limit of 200°C can be extended to 300°C if the GaAs sample is implanted hot (e.g. 150°C), an inctication that reduced implantation damage improves thermal stability of implanted dopants. At and above these temperatures, the observed changes in the carder concentrations in tellurium and selenium implanted GaAs are reversible following pulsed laser ann~ng. The changes in selenium and zinc, and beryllium (or magnesium) implanted GaAs are reversible and irreversible respectively, following rapid thermal annealing. probably due to out-diffusion of beryllium and magnesium during annealing. Activation energies obtained for reduction in carrier concentrations vary between ,...., 1 e V and 2 e V, which is suggested to correspond to t he diffusion of gallium vacancies/atoms. Holding GaAs samples above 350°C during transient annealing reduces the rate of decay of electrical cvnductivity induced by a subsequent heat t reatment. More specifi<: information is-needed on the nature of defects, mechanisms of defects formation, and their relationship with thermal stability of implanted dopants. |